ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,831, issued on July 14, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan). "Semiconductor device having a gate on a fin... और पढ़ें
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,832, issued on July 14, was assigned to Intel Corp. (Santa Clara, Calif.). "Epi barrier aligned backside contact" was invented by Leonard P... और पढ़ें
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,833, issued on July 14, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device" was invented by Ho Jin... और पढ़ें
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,834, issued on July 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Complementary field effect transist... और पढ़ें
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,835, issued on July 14, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Structure and formation method ... और पढ़ें
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,836, issued on July 14, was assigned to Socionext Inc. (Kanagawa, Japan). "Semiconductor integrated circuit device" was invented by Junji I... और पढ़ें
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,838, issued on July 14, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.). "Structure and related method for source/drain terminal wi... और पढ़ें
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,839, issued on July 14, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device" was invented by Ki Hwa... और पढ़ें
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,840, issued on July 14, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor device with cap e... और पढ़ें
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,841, issued on July 14, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.). "Gate structure on intrinsic base layer and overhanging la... और पढ़ें